• DocumentCode
    632315
  • Title

    Grid impedance identification using SiC-Jfet switch-module

  • Author

    Langkowski, Hauke ; Volcker, S. ; Lucken, Arno ; Do Thanh, T. ; Jordan, Mariana ; Schulz, Dirk

  • Author_Institution
    Electr. Power Syst., Helmut Schmidt Univ., Hamburg, Germany
  • fYear
    2013
  • fDate
    11-13 June 2013
  • Firstpage
    320
  • Lastpage
    324
  • Abstract
    The grid impedance identification is important to evaluate the effect on the power quality by renewable energy sources using inverters. It can also be used for improved design of existing grid-side filters and the control parameters for the inverters. One approach to determine the grid impedance is based on the switching of an ohmic load. The resulting transients caused by this switching can be used to calculate the frequency dependent grid impedance. In this paper the development of a switch using SiC-Jfets is presented. With this switch high switching frequencies and adjustable slopes within certain limits can be generated which is important for a precise identification of the grid impedance. Measurements of the first 6 kV prototype and the design for the required gate driver are presented.
  • Keywords
    field effect transistor switches; invertors; junction gate field effect transistors; power filters; power grids; power supply quality; silicon compounds; SiC; frequency-dependent grid impedance; gate driver; grid impedance identification; grid-side filters; inverter control parameter; ohmic load switching; power quality; renewable energy sources; switching frequency; voltage 6 kV; Current measurement; Impedance; Logic gates; Optical switches; Prototypes; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Clean Electrical Power (ICCEP), 2013 International Conference on
  • Conference_Location
    Alghero
  • Print_ISBN
    978-1-4673-4429-6
  • Type

    conf

  • DOI
    10.1109/ICCEP.2013.6587008
  • Filename
    6587008