DocumentCode
632315
Title
Grid impedance identification using SiC-Jfet switch-module
Author
Langkowski, Hauke ; Volcker, S. ; Lucken, Arno ; Do Thanh, T. ; Jordan, Mariana ; Schulz, Dirk
Author_Institution
Electr. Power Syst., Helmut Schmidt Univ., Hamburg, Germany
fYear
2013
fDate
11-13 June 2013
Firstpage
320
Lastpage
324
Abstract
The grid impedance identification is important to evaluate the effect on the power quality by renewable energy sources using inverters. It can also be used for improved design of existing grid-side filters and the control parameters for the inverters. One approach to determine the grid impedance is based on the switching of an ohmic load. The resulting transients caused by this switching can be used to calculate the frequency dependent grid impedance. In this paper the development of a switch using SiC-Jfets is presented. With this switch high switching frequencies and adjustable slopes within certain limits can be generated which is important for a precise identification of the grid impedance. Measurements of the first 6 kV prototype and the design for the required gate driver are presented.
Keywords
field effect transistor switches; invertors; junction gate field effect transistors; power filters; power grids; power supply quality; silicon compounds; SiC; frequency-dependent grid impedance; gate driver; grid impedance identification; grid-side filters; inverter control parameter; ohmic load switching; power quality; renewable energy sources; switching frequency; voltage 6 kV; Current measurement; Impedance; Logic gates; Optical switches; Prototypes; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Clean Electrical Power (ICCEP), 2013 International Conference on
Conference_Location
Alghero
Print_ISBN
978-1-4673-4429-6
Type
conf
DOI
10.1109/ICCEP.2013.6587008
Filename
6587008
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