DocumentCode :
632315
Title :
Grid impedance identification using SiC-Jfet switch-module
Author :
Langkowski, Hauke ; Volcker, S. ; Lucken, Arno ; Do Thanh, T. ; Jordan, Mariana ; Schulz, Dirk
Author_Institution :
Electr. Power Syst., Helmut Schmidt Univ., Hamburg, Germany
fYear :
2013
fDate :
11-13 June 2013
Firstpage :
320
Lastpage :
324
Abstract :
The grid impedance identification is important to evaluate the effect on the power quality by renewable energy sources using inverters. It can also be used for improved design of existing grid-side filters and the control parameters for the inverters. One approach to determine the grid impedance is based on the switching of an ohmic load. The resulting transients caused by this switching can be used to calculate the frequency dependent grid impedance. In this paper the development of a switch using SiC-Jfets is presented. With this switch high switching frequencies and adjustable slopes within certain limits can be generated which is important for a precise identification of the grid impedance. Measurements of the first 6 kV prototype and the design for the required gate driver are presented.
Keywords :
field effect transistor switches; invertors; junction gate field effect transistors; power filters; power grids; power supply quality; silicon compounds; SiC; frequency-dependent grid impedance; gate driver; grid impedance identification; grid-side filters; inverter control parameter; ohmic load switching; power quality; renewable energy sources; switching frequency; voltage 6 kV; Current measurement; Impedance; Logic gates; Optical switches; Prototypes; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Clean Electrical Power (ICCEP), 2013 International Conference on
Conference_Location :
Alghero
Print_ISBN :
978-1-4673-4429-6
Type :
conf
DOI :
10.1109/ICCEP.2013.6587008
Filename :
6587008
Link To Document :
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