175,000 device-hours operation of AlGaN/GaN HEMTs on diamond at 200°C channel temperature

Author

Babic, D.I. ; Diduck, Quentin ; Khandavalli, Chandra S. ; Francis, Daniel ; Faili, Firooz N. ; Ejeckam, F.

Author_Institution

Group4 Labs., Inc., Fremont, CA, USA

fYear

2013

fDate

20-24 May 2013

Firstpage

55

Lastpage

59

Abstract

Hundred and seventy-five thousand device-hours of operating life at channel temperatures above 200°C is demonstrated on AlGaN/GaN HEMTs fabricated using GaN-on-diamond technology for the first time. No catastrophic failures and no drain-current drift larger than 10% from turning the devices on were recorded throughout this two-year DC test.

Keywords

III-V semiconductors; aluminium compounds; diamond; gallium compounds; high electron mobility transistors; life testing; semiconductor device reliability; semiconductor device testing; wide band gap semiconductors; AlGaN-GaN; DC test; GaN-on-diamond technology; HEMT; catastrophic failures; drain-current drift; high electron mobility transistors; temperature 200 degC; time 175000 hour; Diamonds; Gallium nitride; HEMTs; MODFETs; Reliability; Temperature measurement; diamond; gallium nitride; semiconductor device reliability; transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Information & Communication Technology Electronics & Microelectronics (MIPRO), 2013 36th International Convention on

Conference_Location

Opatija

Print_ISBN

978-953-233-076-2

Type

conf

Filename

6596224