Title :
Operating wavelength range of 25.8-Gb/s 1.3-µm DML extended to 30 nm
Author :
Kobayashi, Wataru ; Tsuzuki, Ken ; Fujisawa, T. ; Ohiso, Y. ; Ogiso, Y. ; Ito, Takao ; Kanazawa, S. ; Yamanaka, T. ; Kohtoku, M. ; Sanjoh, H.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
A 30-nm operating wavelength range was realized for a 1.3-μm InGaAlAs DML with a 25.8-Gb/s push-pull driving configuration. Clear eye openings, an 8.0-dBm output power, and a 4.0-dB dynamic extinction ratio were obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical modulation; semiconductor lasers; DML; InGaAlAs; bit rate 25.8 Gbit/s; directlly modulated laser; dynamic extinction ratio; push-pull driving configuration; wavelength 1.3 mum; wavelength 30 nm; Density estimation robust algorithm; Gain; Lasers; Light sources; Power demand; Temperature measurement; Transmission line measurements;
Conference_Titel :
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location :
Kyoto