Title :
Impacts of Post-Treatments on Cell Performance of CIGS Solar Cells With Zn-Compound Buffer Layers
Author :
Nakada, Tokio ; Kobayashi, Taizo ; Kumazawa, Toyokazu ; Yamaguchi, Hiroshi
Author_Institution :
Aoyama Gakuin Univ., Sagamihara, Japan
Abstract :
The postdeposition treatments, such as ammonia rinsing, light soaking, and heat light soaking on cell performances of Cu(In,Ga)Se2 (CIGS) solar cells with Zn-compound buffer layers, are investigated. The impacts of these treatments are discussed in connection with the band alignment at the transparent conducting oxide (TCO)/buffer/CIGS interface. Three types of CIGS solar cells with sputter-deposited ZnO:Al/CBD-ZnS(O,OH), MOCVD-ZnO:B/CBD-ZnS(O,OH), and MOCVD-ZnO:B/ALD-Zn(O,S) are investigated in this paper. The importance of the combination of buffer/TCO materials and deposition processes is discussed. We demonstrate that the adjustment of an S/(S+O) atomic ratio relevant to the band alignment at the buffer/CIGS interface is critical to achieve high-efficiency CIGS solar cells with Zn-compound buffer layer.
Keywords :
II-VI semiconductors; MOCVD; annealing; buffer layers; copper compounds; gallium compounds; indium compounds; semiconductor growth; solar cells; sputter deposition; ternary semiconductors; wide band gap semiconductors; zinc compounds; Cu(InGa)Se2; Zn(OS)-ZnO:Al; Zn-compound buffer layers; ZnS(OOH)-ZnO:Al; ZnS(OOH)-ZnO:B; ammonia rinsing; atomic ratio adjustment; band alignment; buffer-transparent conducting oxide materials; cell performance; deposition processes; heat light soaking; high-efficiency CIGS solar cells; post-deposition treatments; transparent conducting oxide-buffer-CIGS interface; Annealing; Atomic layer deposition; Buffer layers; Lighting; Photovoltaic cells; Zinc oxide; Air-annealing; Cu(In,Ga)Se$_{2}$ CIGS solar cell; ZnS(O,OH) buffer layer; ammonia rinsing; heat light soaking (HLS); light soaking (LS);
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2012.2223456