Title :
Si wire array waveguide grating with reduced phase error: Effect of advanced lithography process
Author :
Okayama, Hideaki ; Shimura, Daisuke ; Takahashi, Hiroki ; Seki, Morihiro ; Toyama, Munehiro ; Sano, Tomomi ; Koshino, Keiji ; Yokoyama, Naoki ; Ohtsuka, Minoru ; Sugiyama, Akihiko ; Ishitsuka, S. ; Tsuchizawa, Tai ; Nishi, Hidetaka ; Yamada, Koji ; Yaegas
Author_Institution :
Inst. for Photonics-Electron. Convergence Syst. Technol. (PECST), Oki Electr. Ind. Co., Ltd., Warabi, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
We report the Si wire AWG without systematic phase error generated at the curved waveguides. A 200GHz spacing 16 channel devices were fabricated by ArF immersion and EB lithography and the results are compared.
Keywords :
argon compounds; arrayed waveguide gratings; electron beam lithography; elemental semiconductors; silicon; ArF; ArF immersion; EB lithography; Si; Si wire AWG; Si wire array waveguide grating; advanced lithography process; curved waveguides; reduced phase error; Arrayed waveguide gratings; Arrays; Couplers; Lithography; Photonics; Silicon;
Conference_Titel :
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location :
Kyoto
