• DocumentCode
    633392
  • Title

    Intersubband all-optical switch with bandgap control of InGaAs/AlAsSb quantum wells

  • Author

    Jijun Feng ; Akimoto, Ryoichi ; Gozu, Shin-ichiro ; Mozume, Teruo ; Hasama, Toshifumi ; Ishikawa, Hiroshi

  • Author_Institution
    Network Photonics Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Bandgap control of ion-induced intermixing on InGaAs/AlAsSb coupled double quantum wells is studied. Moreover, a monolithic all-optical Michelson interferometer gating switch integrated with two different bandgap energies is developed based on the area-selective method.
  • Keywords
    III-V semiconductors; Michelson interferometers; aluminium compounds; energy gap; gallium arsenide; indium compounds; optical switches; semiconductor quantum wells; InGaAs-AlAsSb; InGaAs-AlAsSb coupled double quantum wells; bandgap control; gating switch; intersubband all-optical switch; ion-induced intermixing; monolithic all-optical Michelson interferometer; Indium gallium arsenide; Ion implantation; Modulation; Optical switches; Photonic band gap; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
  • Conference_Location
    Kyoto
  • Type

    conf

  • Filename
    6597527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=633392