Title :
Switching operation using 220nm thickness Si waveguides with ferroelectric liquid crystal
Author :
Hayama, Y. ; Nonaka, Tomomi ; Kato, Akira ; Nakatsuhara, K. ; Nakagami, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kanagawa Inst. of Technol., Atsugi, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
Switching operations were demonstrated using 220nm thickness Si waveguides with ferro-electric liquid crystal cladding. The phase shift coefficient was evaluated from the switching characteristics to be 3.84 π rad/mm, which is higher than the conventional value.
Keywords :
elemental semiconductors; ferroelectric devices; liquid crystal devices; optical switches; optical waveguides; silicon; Si; ferroelectric liquid crystal; optical waveguide; phase shift coefficient; size 220 nm; switching operation; Liquid waveguides; Optical device fabrication; Optical switches; Optical waveguides; Phase shifters; Refractive index; Silicon;
Conference_Titel :
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location :
Kyoto
