DocumentCode
633414
Title
Lasing characteristics dependence on in composition of 850 nm (In)GaAs TQWs VCSELs with low power consumption for optical interconnects
Author
Kondo, Toshiaki ; Takeda, Kenji ; Nakayama, Hiroki
Author_Institution
Electr. Device Eng., Production Technol., Fuji Xerox Co. Ltd., Ebina, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
We investigated lasing characteristics of (In)GaAs TQWs VCSELs with different In composition in terms of low power consumption. The bias current of 10 Gbps operation was reduced by using InGaAs TQWs.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; low-power electronics; optical interconnections; quantum well lasers; surface emitting lasers; InGaAs; TQW; VCSEL; lasing characteristics; low power consumption; optical interconnects; three quantum wells; vertical cavity surface emitting lasers; wavelength 850 nm; Gallium arsenide; Indium gallium arsenide; Optical interconnections; Power demand; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location
Kyoto
Type
conf
Filename
6597549
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