Title :
Lasing characteristics dependence on in composition of 850 nm (In)GaAs TQWs VCSELs with low power consumption for optical interconnects
Author :
Kondo, Toshiaki ; Takeda, Kenji ; Nakayama, Hiroki
Author_Institution :
Electr. Device Eng., Production Technol., Fuji Xerox Co. Ltd., Ebina, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
We investigated lasing characteristics of (In)GaAs TQWs VCSELs with different In composition in terms of low power consumption. The bias current of 10 Gbps operation was reduced by using InGaAs TQWs.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; low-power electronics; optical interconnections; quantum well lasers; surface emitting lasers; InGaAs; TQW; VCSEL; lasing characteristics; low power consumption; optical interconnects; three quantum wells; vertical cavity surface emitting lasers; wavelength 850 nm; Gallium arsenide; Indium gallium arsenide; Optical interconnections; Power demand; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location :
Kyoto
