Title :
Performance enhancement of a biasing-ITO-AR-electrode MOS-structure silicon solar cells
Author :
Jia-Ying Wu ; Wen-Jeng Ho ; Jheng-Jie Liu ; Yuan-Tsz Chen ; Yi-Yu Lee ; Min-Chun Huang ; Po-Hung Tsai ; Chi-He Lin ; Po-Yueh Cheng
Author_Institution :
Dept. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
fDate :
June 30 2013-July 4 2013
Abstract :
We demonstrate MOS-structure silicon solar-cells using a biasing antireflective-ITO-electrode to enhance the photovoltaic performance. The enhancement of the short-circuit-current and conversion-efficiency was confirmed by the light-current-voltage and induced-junction-capacitance measurements when applied 0-2.5 V-biasing on ITO-electrode.
Keywords :
MIS structures; electrochemical electrodes; elemental semiconductors; indium compounds; silicon; solar cells; tin compounds; ITO; Si; biasing antireflective-ITO-electrode; biasing-ITO-AR-electrode MOS-structure silicon solar cells; conversion-efficiency; induced-junction-capacitance measurements; light-current-voltage; photovoltaic performance; short-circuit-current; voltage 0 V to 2.5 V; Electrodes; Indium tin oxide; Junctions; Photovoltaic cells; Photovoltaic systems; Silicon;
Conference_Titel :
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location :
Kyoto
