DocumentCode
633427
Title
GHz response of MSM InGaAs photodetector on Si substrate by BCB bonding
Author
Maekita, Kazuaki ; Maruyama, Tetsuhiro ; Iiyama, Koichi
Author_Institution
Grad. Sch. of Natural Sci. & Technol., Kanazawa Univ., Ishikawa, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
We fabricated an InGaAs metal-semiconductor-metal (MSM) photodetector bonded on Si substrate by Benzocyclobutene bonding method. The responsivity of 0.035 A/W at 1.55 μm-wavelenght and the dark current of 29 nA at the bias voltage of 6V were obtained. The bandwidth of 3 GHz was obtained at the bias voltage of 10 V.
Keywords
III-V semiconductors; bonding processes; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; silicon; BCB bonding method; GHz response; InGaAs; MSM photodetector; benzocyclobutene bonding method; current 29 nA; dark current; frequency 3 GHz; metal-semiconductor-metal photodetector; voltage 6 V; wavelength 1.55 mum; Bonding; Indium gallium arsenide; Optical waveguides; Photodetectors; Photonics; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location
Kyoto
Type
conf
Filename
6597562
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