Building the electrical model of the pulsed photoelectric laser stimulation of a PMOS transistor in 90nm technology

Author

Sarafianos, A. ; Gagliano, O. ; Lisart, M. ; Serradeil, V. ; Dutertre, J.-M. ; Tria, Assia

Author_Institution

STMicroelectron., Rousset, France

fYear

2013

fDate

15-19 July 2013

Firstpage

22

Lastpage

27

Abstract

This paper presents measurements of pulsed photoelectrical laser stimulation of a PMOS transistor in 90 nm technology. The laser power was able to trig three PNP parasitic bipolar transistors Drain/Nwell/Source, Drain/Nwell/Psubstrate and Source/Nwell/Psubstrate. An electrical model is proposed in order to simulate effects induced by the laser. Results extracted from the electrical simulator are compared to measurements.

Keywords

MOSFET; equivalent circuits; laser beam effects; photoelectricity; semiconductor device models; PMOS transistor; electrical model; pulsed photoelectric laser stimulation; pulsed photoelectrical laser stimulation; size 90 nm; trig three PNP parasitic bipolar transistors; Junctions; Laser applications; Laser modes; Measurement by laser beam; Power lasers; Semiconductor lasers; Transistors; 1064nm wavelength; PMOS transistor; parasitic bipolar transistor; pulsed PLS;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599120

Filename

6599120