DocumentCode :
633852
Title :
The variability issues in small scale trigate CMOS devices: Random dopant and trap induced fluctuations
Author :
Chung, Steve S.
Author_Institution :
Dept. of Electron. En@ineerin., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
15-19 July 2013
Firstpage :
173
Lastpage :
176
Abstract :
In this paper, the variability issues of small scale trigate CMOS devices will be presented. Two major sources of the variability are discussed, RDF (Random Dopant Fluctuation) and RTF (Random Trap Fluctuation). The former is induced by the process, while the later is induced by the devices after the electrical stress. For process-induced Vth variation, the major source of variability for conventional CMOS devices comes from the random dopant fluctuation (RDF) in the device channel. The theoretical basis from an experimental discrete dopant profiling technique will first been introduced to analyze the RDF effect. Then, for stress-induced Vth variation, the RTF will be introduced. In general, the trigate device structure has been able to suppress the RDF effect. However, the increasing RTF effect becomes critical to the development of trigate CMOS devices. More in-depth understanding of the variation for device after the electrical stress will be elucidated in this paper. The important sidewall roughness effect in the trigate device will also be addressed. Moreover, more recent results to demonstrate the stress-induced traps and the correlation to device reliability will be demonstrated.
Keywords :
CMOS integrated circuits; semiconductor doping; RDF; RTF; electrical stress; random dopant fluctuations; randomtrap induced fluctuations; small scale trigate CMOS devices; stress-induced traps; variability issues; CMOS integrated circuits; Fluctuations; MOS devices; MOSFET circuits; Resource description framework; Semiconductor process modeling; Stress; Reliability; Trigate CMOS; Variability; Variation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
ISSN :
1946-1542
Print_ISBN :
978-1-4799-1241-4
Type :
conf
DOI :
10.1109/IPFA.2013.6599148
Filename :
6599148
Link To Document :
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