Reliability comparison on self-aligned via and punch-through via etch methods of hard-mask based Cu/ultra low-k interconnects

Author

Jie Zhou ; Zhenghao Gan ; Minda Hu ; Fanfei Bai ; Lei Zhou

Author_Institution

Technol. R&D, Semicond. Manuf. Int. Corp., Shanghai, China

fYear

2013

fDate

15-19 July 2013

Firstpage

221

Lastpage

223

Abstract

In this paper reliability performance of two all-in-one etch methods, self-aligned via (SAV) and punch-through (PT), has been investigated in detail. The breakdown voltage (Vbd) has been dramatically improved with the SAV etch method. However, electromigration (EM) performance has showed ~50% degradation. On the other hand, no degradation was found in stress migration (SM) performance. The underlying mechanisms for the reliability difference are detailed.

Keywords

copper; electric breakdown; electromigration; etching; low-k dielectric thin films; masks; reliability; vias; Cu; EM performance; PT etch method; SAV etch method; SM performance; breakdown voltage; electromigration performance; hard-mask based copper-ultra low-k interconnects; punch-through via etch method; reliability comparison; reliability difference; reliability performance; self-aligned via etch method; stress migration performance; Degradation; Dielectrics; Integrated circuit interconnections; Metals; Reliability; Stress; Weibull distribution; Self align via (SAV); punch through (PT);

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599157

Filename

6599157