Strain measurement of Fin structure using TEM objective lens dark-field off-axis holography

Author

Zhu, Junan ; Tan, Hong ; Bello, A. ; Pham, Duc-Son ; Zhou, Y.K. ; Liu, Bernard Haochih ; Mai, Z.H. ; Du, Anna ; Zhao, Si Ping

Author_Institution

Globalfoundries, Singapore, Singapore

fYear

2013

fDate

15-19 July 2013

Firstpage

243

Lastpage

246

Abstract

In this work, TEM dark-filed off-axis holography using objective lens was investigated to study strain distribution in Fin structure induced by stress liner. Compared with Lorentz lens mode holography, objective lens holography provides much more improved spatial resolution and contrast which are critical for reliable strain measurement of small structures such as FinFETs. Result was also compared with nano-beam diffraction strain measurement technique.

Keywords

MOSFET; diffraction; holographic optical elements; lenses; nanoelectronics; semiconductor device reliability; semiconductor device testing; strain measurement; transmission electron microscopy; FinFET; Lorentz lens mode holography; TEM dark-filed off-axis holography; TEM objective lens dark-field off-axis holography; contrast; fin structure; nanobeam diffraction strain measurement technique; reliable strain measurement; spatial resolution; strain distribution; stress liner; Diffraction; Holography; Lenses; Silicon; Spatial resolution; Strain; Strain measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599161

Filename

6599161