Title :
Transverse domain wall formation in a free layer: A mechanism for switching failure in a MTJ-based STT-MRAM
Author :
Makarov, A. ; Sverdlov, Viktor ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
We investigate the switching failure probability in a MTJ-based STT-MRAM as a function of the switching current value and the pulse duration by means of extensive micromagnetic simulations. We analyze a new failure mechanism for switching through the formation and pinning of the transverse domain wall in the free layer of the STT-MRAM cell.
Keywords :
MRAM devices; electric domain walls; probability; switching; MTJ-based STT-MRAM; free layer; micromagnetic simulations; pulse duration; switching current value; switching failure probability; transverse domain wall formation; Current density; Failure analysis; Magnetic domain walls; Magnetic domains; Magnetic tunneling; Magnetization; Switches; MTJ; STT-MRAM; failure analysis; micromagnetic modeling; switching probability;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599165
