New gas applications of backside circuit edit for voiding spontaneous damage

Author

Chun Ming Tsai ; Yi Shiuan Huang ; Ya Hui Lu ; Mingte Lin

Author_Institution

United Microelectron. Corp., Ltd., Hsinchu, Taiwan

fYear

2013

fDate

15-19 July 2013

Firstpage

470

Lastpage

473

Abstract

A novel solution is presented for dielectric and silicon etching when using Focused ion beam (FIB) for circuit edit (CE). In contrast to commonly used XeF2, the new solution has a significantly higher activation threshold that allows it to be used for etching new sensitive low-k dielectrics and even thin silicon without the risk of damaging these materials spontaneously.

Keywords

elemental semiconductors; failure analysis; focused ion beam technology; low-k dielectric thin films; silicon; sputter etching; CE; FIB; Si; activation threshold; dielectric etching; focused ion beam; gas application; gas applications of backside circuit edit; low-k dielectrics; silicon etching; spontaneous damage voiding; thin silicon; Chemicals; Dielectrics; Etching; Failure analysis; Integrated circuits; Milling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599202

Filename

6599202

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=633880