DocumentCode :
633885
Title :
Application of EMMI contrast method in failure analysis
Author :
Xuanlong Chen ; Xianjun Kuang ; Guangning Xu
Author_Institution :
Reliability Res. & Anal. Center, China CEPREI Lab., Guangzhou, China
fYear :
2013
fDate :
15-19 July 2013
Firstpage :
504
Lastpage :
507
Abstract :
Photoemission microscope (EMMI) has been introduced in failure analysis of integrated circuits for a long time. By this technology, we can locate the failure site and confirm the failure mechanisms easily. However, there are considerable difficulties in determining test strategies and testability of fault localization when the circuit failed. In this paper, we proposed an EMMI contrast method in failure analysis of breakdown and current leakage. The contrast method mainly consists of I/V characteristic scan, quiescent bias testing and EMMI. Results indicate the method is efficient in ESD failure cases.
Keywords :
electric breakdown; failure analysis; integrated circuit testing; photoelectron microscopy; EMMI contrast method; ESD failure; I-V characteristic scan; circuit failure; current leakage; failure analysis; failure mechanism; fault localization; integrated circuits; photoemission microscope; quiescent bias testing; Circuit faults; Electrostatic discharges; Failure analysis; Integrated circuits; Junctions; Photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
ISSN :
1946-1542
Print_ISBN :
978-1-4799-1241-4
Type :
conf
DOI :
10.1109/IPFA.2013.6599211
Filename :
6599211
Link To Document :
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