Title :
Application of transmission EBSD in aluminium metal layer and GaAs/AlAs epitaxial layers
Author :
Yi Qiang Shen ; Lee, Edward ; Shue Yin Chow ; Bing Sheng Khoo ; Kon, Cynthia ; Dong Gui ; Zhen Xiang Xing
Author_Institution :
Wintech Nano - Technol. Services Pte. Ltd., Singapore, Singapore
Abstract :
Transmission EBSD is used to analyze aluminum metal layer and GaAs/AlAs epitaxial layers, both are very common in semiconductor industries. Transmission EBSD shows a lateral spatial resolution about 20 nm and successfully reveals to features less than 100 nm in these samples.
Keywords :
III-V semiconductors; aluminium compounds; electron backscattering; electron diffraction; gallium arsenide; semiconductor epitaxial layers; GaAs-AlAs; aluminium metal layer; electron backscatter diffraction; epitaxial layers; lateral spatial resolution; semiconductor industries; transmission EBSD; Diffraction; Lattices; Through-silicon vias;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599212
