DocumentCode
633886
Title
Application of transmission EBSD in aluminium metal layer and GaAs/AlAs epitaxial layers
Author
Yi Qiang Shen ; Lee, Edward ; Shue Yin Chow ; Bing Sheng Khoo ; Kon, Cynthia ; Dong Gui ; Zhen Xiang Xing
Author_Institution
Wintech Nano - Technol. Services Pte. Ltd., Singapore, Singapore
fYear
2013
fDate
15-19 July 2013
Firstpage
508
Lastpage
511
Abstract
Transmission EBSD is used to analyze aluminum metal layer and GaAs/AlAs epitaxial layers, both are very common in semiconductor industries. Transmission EBSD shows a lateral spatial resolution about 20 nm and successfully reveals to features less than 100 nm in these samples.
Keywords
III-V semiconductors; aluminium compounds; electron backscattering; electron diffraction; gallium arsenide; semiconductor epitaxial layers; GaAs-AlAs; aluminium metal layer; electron backscatter diffraction; epitaxial layers; lateral spatial resolution; semiconductor industries; transmission EBSD; Diffraction; Lattices; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599212
Filename
6599212
Link To Document