Backside dynamic thermal laser signal injection microscopy (T-LSIM) fault isolation technique on WLCSP devices

Dynamic T-LSIM is a widely used technique in the failure analysis of semiconductor devices. However, this technique has limitations when used on WLCSP devices with highly voltage sensitive, intermittent and marginal failures. This work highlights a novel, low cost and efficient approach in localizing soft defects using backside dynamic T-LSIM on WLCSP devices.