Title :
Real time observation of nanoscale multiple conductive filaments in RRAM by using advanced in-situ TEM
Author :
Sun, Jian ; Wu, Xiaojie ; Liu, Quanwei ; Liu, Minggang ; Sun, L.T.
Author_Institution :
SEU-FEI Nano-Pico Center, Southeast Univ., Nanjing, China
Abstract :
In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.
Keywords :
X-ray chemical analysis; copper; electrochemical electrodes; nickel; random-access storage; silver; transmission electron microscopy; zirconium compounds; Ag; Cu; Ni; RRAM; ZrO2; bottom electrodes; energy-dispersive X-ray spectroscopy; in-situ TEM; nanoscale multiple conductive filaments; physical mechanism; real time observation; resistive switching characteristics; top electrode; transmission electron microscopy; Decision support systems; Failure analysis; Integrated circuits; Metals; Switches; Transmission electron microscopy; Transmission electron microscopy (TEM); conductive filaments; in-situ; resistive random access memory;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599223