A study of substrate damage issue caused SRAM device soft failure

Author

Yu Hsiang Shu ; Chun Ming Chen ; Chia Hsing Chao ; Song Chao Gang

Author_Institution

United Microelectron. Corp., Ltd., Hsinchu, Taiwan

fYear

2013

fDate

15-19 July 2013

Firstpage

569

Lastpage

573

Abstract

In this paper, we focus on how to identify the influence of device cause by substrate damage issue via nanoprobing analysis, and inferring that the equivalent mathematical models was application to describe the corresponding electrical data in a device with substrate damage issue. A case study was presented to verify that poor Poly etching process control caused substrate damage issue, and this issue can be identified via physical failure analysis (PFA) method (e.g. Transmission Electron Microscope (TEM) and Focus Ion Beam (FIB) techniques) and nanoprobing analysis method.

Keywords

SRAM chips; etching; failure analysis; focused ion beam technology; process control; transmission electron microscopy; FIB techniques; PFA; SRAM device soft failure; TEM; electrical data; focus ion beam techniques; mathematical models; nanoprobing analysis; physical failure analysis; poly etching; process control; substrate damage; transmission electron microscope; Failure analysis; Integrated circuit modeling; Mathematical model; Resistance; Substrates; Threshold voltage; Transistors; Contact volcano; Nanoprobing; SRAM soft failure;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599225

Filename

6599225