Title :
A study of substrate damage issue caused SRAM device soft failure
Author :
Yu Hsiang Shu ; Chun Ming Chen ; Chia Hsing Chao ; Song Chao Gang
Author_Institution :
United Microelectron. Corp., Ltd., Hsinchu, Taiwan
Abstract :
In this paper, we focus on how to identify the influence of device cause by substrate damage issue via nanoprobing analysis, and inferring that the equivalent mathematical models was application to describe the corresponding electrical data in a device with substrate damage issue. A case study was presented to verify that poor Poly etching process control caused substrate damage issue, and this issue can be identified via physical failure analysis (PFA) method (e.g. Transmission Electron Microscope (TEM) and Focus Ion Beam (FIB) techniques) and nanoprobing analysis method.
Keywords :
SRAM chips; etching; failure analysis; focused ion beam technology; process control; transmission electron microscopy; FIB techniques; PFA; SRAM device soft failure; TEM; electrical data; focus ion beam techniques; mathematical models; nanoprobing analysis; physical failure analysis; poly etching; process control; substrate damage; transmission electron microscope; Failure analysis; Integrated circuit modeling; Mathematical model; Resistance; Substrates; Threshold voltage; Transistors; Contact volcano; Nanoprobing; SRAM soft failure;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599225
