Title :
SCM application in localized 2D dopant profiling
Author :
Lee Siew Shyuan ; Siong, Kenny Gan Chye ; Lee Nean Sern
Author_Institution :
Infineon Technol. (Kulim) Sdn. Bhd., Kulim, Malaysia
Abstract :
The paper presents the application of Scanning Capacitance Microscopy (SCM) on doping related failures via 2D dopant profiling at the electrically isolated failure location. Case studies of wafer level failure analysis were discussed; the SCM results pinpointed the problematic doping profile induced during wafer fabrication process due to defect density or process deviation.
Keywords :
capacitance measurement; doping profiles; scanning probe microscopy; semiconductor doping; SCM application; defect density; doping related failure; electrically isolated failure location; localized 2D dopant profiling; process deviation; scanning capacitance microscopy; wafer fabrication process; wafer level failure analysis; Capacitance; Decision support systems; Failure analysis; Integrated circuit reliability; Integrated circuits; Microscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599236
