DocumentCode
633898
Title
SCM application in localized 2D dopant profiling
Author
Lee Siew Shyuan ; Siong, Kenny Gan Chye ; Lee Nean Sern
Author_Institution
Infineon Technol. (Kulim) Sdn. Bhd., Kulim, Malaysia
fYear
2013
fDate
15-19 July 2013
Firstpage
615
Lastpage
619
Abstract
The paper presents the application of Scanning Capacitance Microscopy (SCM) on doping related failures via 2D dopant profiling at the electrically isolated failure location. Case studies of wafer level failure analysis were discussed; the SCM results pinpointed the problematic doping profile induced during wafer fabrication process due to defect density or process deviation.
Keywords
capacitance measurement; doping profiles; scanning probe microscopy; semiconductor doping; SCM application; defect density; doping related failure; electrically isolated failure location; localized 2D dopant profiling; process deviation; scanning capacitance microscopy; wafer fabrication process; wafer level failure analysis; Capacitance; Decision support systems; Failure analysis; Integrated circuit reliability; Integrated circuits; Microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599236
Filename
6599236
Link To Document