DocumentCode :
633901
Title :
The example of circuit analysis to assist 2nd-generation hot spot for the failure localization
Author :
Shouzhu Guo ; Pan, Andrew ; Mingjie Xu ; Sun, Tairen ; Li-Lung Lai
Author_Institution :
Semicond. Manuf. Int. Corp. (SMIC), Shanghai, China
fYear :
2013
fDate :
15-19 July 2013
Firstpage :
633
Lastpage :
636
Abstract :
Hotspot localization in the chip is the common and effective methodology in the Semiconductor Failure Analysis (FA), However, we often cannot proceed in the successful Physical Failure Analysis (PFA) via the first-generation hot spots. In the paper, we show one example with assistance of circuit analysis to perform the effectively physical fault isolation. We identified the issue of capacitor using negative charging Voltage Contrast (VC) in the following PFA process. The confirmed failure mechanism is demonstrated.
Keywords :
failure analysis; logic circuits; PFA process; capacitor; circuit analysis; confirmed failure mechanism; failure localization; first-generation hot spots; hotspot localization; logic chip; negative charging VC; negative charging voltage contrast; physical failure analysis; physical fault isolation; second-generation hot spot; semiconductor FA; semiconductor failure analysis; Capacitors; Circuit analysis; Electric breakdown; Failure analysis; Imaging; Inductance; Integrated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
ISSN :
1946-1542
Print_ISBN :
978-1-4799-1241-4
Type :
conf
DOI :
10.1109/IPFA.2013.6599240
Filename :
6599240
Link To Document :
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