DocumentCode
633901
Title
The example of circuit analysis to assist 2nd-generation hot spot for the failure localization
Author
Shouzhu Guo ; Pan, Andrew ; Mingjie Xu ; Sun, Tairen ; Li-Lung Lai
Author_Institution
Semicond. Manuf. Int. Corp. (SMIC), Shanghai, China
fYear
2013
fDate
15-19 July 2013
Firstpage
633
Lastpage
636
Abstract
Hotspot localization in the chip is the common and effective methodology in the Semiconductor Failure Analysis (FA), However, we often cannot proceed in the successful Physical Failure Analysis (PFA) via the first-generation hot spots. In the paper, we show one example with assistance of circuit analysis to perform the effectively physical fault isolation. We identified the issue of capacitor using negative charging Voltage Contrast (VC) in the following PFA process. The confirmed failure mechanism is demonstrated.
Keywords
failure analysis; logic circuits; PFA process; capacitor; circuit analysis; confirmed failure mechanism; failure localization; first-generation hot spots; hotspot localization; logic chip; negative charging VC; negative charging voltage contrast; physical failure analysis; physical fault isolation; second-generation hot spot; semiconductor FA; semiconductor failure analysis; Capacitors; Circuit analysis; Electric breakdown; Failure analysis; Imaging; Inductance; Integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599240
Filename
6599240
Link To Document