• DocumentCode
    633901
  • Title

    The example of circuit analysis to assist 2nd-generation hot spot for the failure localization

  • Author

    Shouzhu Guo ; Pan, Andrew ; Mingjie Xu ; Sun, Tairen ; Li-Lung Lai

  • Author_Institution
    Semicond. Manuf. Int. Corp. (SMIC), Shanghai, China
  • fYear
    2013
  • fDate
    15-19 July 2013
  • Firstpage
    633
  • Lastpage
    636
  • Abstract
    Hotspot localization in the chip is the common and effective methodology in the Semiconductor Failure Analysis (FA), However, we often cannot proceed in the successful Physical Failure Analysis (PFA) via the first-generation hot spots. In the paper, we show one example with assistance of circuit analysis to perform the effectively physical fault isolation. We identified the issue of capacitor using negative charging Voltage Contrast (VC) in the following PFA process. The confirmed failure mechanism is demonstrated.
  • Keywords
    failure analysis; logic circuits; PFA process; capacitor; circuit analysis; confirmed failure mechanism; failure localization; first-generation hot spots; hotspot localization; logic chip; negative charging VC; negative charging voltage contrast; physical failure analysis; physical fault isolation; second-generation hot spot; semiconductor FA; semiconductor failure analysis; Capacitors; Circuit analysis; Electric breakdown; Failure analysis; Imaging; Inductance; Integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
  • Conference_Location
    Suzhou
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4799-1241-4
  • Type

    conf

  • DOI
    10.1109/IPFA.2013.6599240
  • Filename
    6599240