Study on the interface properties and reliability of the electric-double-layer gate dielectric for Hf-In-Zn-O MIS capacitors

Author

Hong-Jiu Wang ; Yao Li ; Xiao Zou

Author_Institution

Dept. of Electromachine Eng., Jianghan Univ., Wuhan, China

fYear

2013

fDate

15-19 July 2013

Firstpage

686

Lastpage

689

Abstract

The electrical characteristics and reliability of the Hf-In-Zn-O (HIZO) MIS capacitor with a microporous SiO₂-based electric-double-layer (EDL)/HfO₂ stack gate dielectrics were investigated. Experimental results indicated that the HfO₂ interlayer could effectively improve the interface quality. Moreover, enhanced reliability of the HIZO MISCAP with EDL/HfO₂ stack gate was observed with an elevated dielectric breakdown voltage of 4.8 V.

Keywords

MIS capacitors; MIS structures; electric breakdown; hafnium; hafnium compounds; indium; semiconductor device reliability; silicon compounds; zinc; HIZO MISCAP; Hf-In-Zn-O; MIS capacitor reliability; SiO₂-HfO₂; dielectric breakdown; electric double layer gate dielectric; interface properties; microporous based electric double layer; stack gate dielectric; voltage 4.8 V; Dielectrics; Films; Hafnium compounds; Leakage currents; Logic gates; Reliability; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599253

Filename

6599253