Title :
Study on the interface properties and reliability of the electric-double-layer gate dielectric for Hf-In-Zn-O MIS capacitors
Author :
Hong-Jiu Wang ; Yao Li ; Xiao Zou
Author_Institution :
Dept. of Electromachine Eng., Jianghan Univ., Wuhan, China
Abstract :
The electrical characteristics and reliability of the Hf-In-Zn-O (HIZO) MIS capacitor with a microporous SiO2-based electric-double-layer (EDL)/HfO2 stack gate dielectrics were investigated. Experimental results indicated that the HfO2 interlayer could effectively improve the interface quality. Moreover, enhanced reliability of the HIZO MISCAP with EDL/HfO2 stack gate was observed with an elevated dielectric breakdown voltage of 4.8 V.
Keywords :
MIS capacitors; MIS structures; electric breakdown; hafnium; hafnium compounds; indium; semiconductor device reliability; silicon compounds; zinc; HIZO MISCAP; Hf-In-Zn-O; MIS capacitor reliability; SiO2-HfO2; dielectric breakdown; electric double layer gate dielectric; interface properties; microporous based electric double layer; stack gate dielectric; voltage 4.8 V; Dielectrics; Films; Hafnium compounds; Leakage currents; Logic gates; Reliability; Thin film transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599253
