Title :
Photo-induced instability and temperature dependence of amorphous In-Ga-Zn-O thin film transistors
Author :
Jie Chen ; Jie Xu ; Mingxiang Wang ; Lu Cai
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
Abstract :
The photo-induced instability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is investigated. Device characteristics under white light illumination with various intensities and its spontaneous recovery at room temperature after illumination are observed. All the observed phenomena, especially the variation of threshold voltage and subthreshold swing, are explained by a simple model based on the photon generated electrons and oxygen vacancy defects in the a-IGZO channel. Further more, the temperature dependence of transfer characteristics for a-IGZO TFTs can be also explained with the same model.
Keywords :
gallium; indium; thin film transistors; zinc; In-Ga-Zn-O; a-IGZO TFT transfer characteristics; amorphous thin film transistors; device characteristics; oxygen vacancy defects; photo-induced instability; photon-generated electrons; spontaneous recovery; subthreshold swing; temperature dependence; threshold voltage; white light illumination; Electron traps; Lighting; Semiconductor device measurement; Temperature; Temperature dependence; Temperature measurement; Thin film transistors; amorphous In-Ga-Zn-O (a-IGZO); oxygen vacancy; photo-induced instability; spontaneous recovery; temperature dependence; thin-film transistor (TFT);
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599254
