Photo-induced instability and temperature dependence of amorphous In-Ga-Zn-O thin film transistors

Author

Jie Chen ; Jie Xu ; Mingxiang Wang ; Lu Cai

Author_Institution

Dept. of Microelectron., Soochow Univ., Suzhou, China

fYear

2013

fDate

15-19 July 2013

Firstpage

690

Lastpage

693

Abstract

The photo-induced instability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is investigated. Device characteristics under white light illumination with various intensities and its spontaneous recovery at room temperature after illumination are observed. All the observed phenomena, especially the variation of threshold voltage and subthreshold swing, are explained by a simple model based on the photon generated electrons and oxygen vacancy defects in the a-IGZO channel. Further more, the temperature dependence of transfer characteristics for a-IGZO TFTs can be also explained with the same model.

Keywords

gallium; indium; thin film transistors; zinc; In-Ga-Zn-O; a-IGZO TFT transfer characteristics; amorphous thin film transistors; device characteristics; oxygen vacancy defects; photo-induced instability; photon-generated electrons; spontaneous recovery; subthreshold swing; temperature dependence; threshold voltage; white light illumination; Electron traps; Lighting; Semiconductor device measurement; Temperature; Temperature dependence; Temperature measurement; Thin film transistors; amorphous In-Ga-Zn-O (a-IGZO); oxygen vacancy; photo-induced instability; spontaneous recovery; temperature dependence; thin-film transistor (TFT);

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599254

Filename

6599254