Au electromigration and Ti segregation in TiPtAu gate of PHEMTs

Author

Huang Yun ; Hong Xiao ; Li Shajin

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., CEPREI, Guangzhou, China

fYear

2013

fDate

15-19 July 2013

Firstpage

709

Lastpage

711

Abstract

In the paper an evaluate structure was designed to investigate the degradation of gate metal in PHEMTs, and it can be used to separately appraise the resisted electromigration levels of the evaporated Ti/Pt/Au and the electroplated Au. The results show that the electromigration resistant level of electroplated Au of Ti/Pt/Au - Au is at least four times lower than that of the evaporated Ti/Pt/Au. For the elements of Au, Ga and Ti in gate metal of Ti/Pt/Au - Au, the degradation of diffusing migration was observed by SIMS. In addition, serious segregation and influx for the element of Ti destroyed the performance of the Schottky barrier in gate structure.

Keywords

Schottky barriers; electromigration; gold alloys; high electron mobility transistors; platinum alloys; segregation; semiconductor device metallisation; titanium alloys; PHEMT; Schottky barrier; Ti-Pt-Au; diffusing migration; electromigration resistance; gate metal degradation; gate structure; resisted electromigration; segregation process; Gold; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; PHEMTs; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599259

Filename

6599259