Title :
Au electromigration and Ti segregation in TiPtAu gate of PHEMTs
Author :
Huang Yun ; Hong Xiao ; Li Shajin
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., CEPREI, Guangzhou, China
Abstract :
In the paper an evaluate structure was designed to investigate the degradation of gate metal in PHEMTs, and it can be used to separately appraise the resisted electromigration levels of the evaporated Ti/Pt/Au and the electroplated Au. The results show that the electromigration resistant level of electroplated Au of Ti/Pt/Au - Au is at least four times lower than that of the evaporated Ti/Pt/Au. For the elements of Au, Ga and Ti in gate metal of Ti/Pt/Au - Au, the degradation of diffusing migration was observed by SIMS. In addition, serious segregation and influx for the element of Ti destroyed the performance of the Schottky barrier in gate structure.
Keywords :
Schottky barriers; electromigration; gold alloys; high electron mobility transistors; platinum alloys; segregation; semiconductor device metallisation; titanium alloys; PHEMT; Schottky barrier; Ti-Pt-Au; diffusing migration; electromigration resistance; gate metal degradation; gate structure; resisted electromigration; segregation process; Gold; Microwave amplifiers; Microwave circuits; Microwave integrated circuits; PHEMTs; Reliability;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599259
