DocumentCode :
633912
Title :
Channel thermal noise modeling and high frequency noise parameters of tri-gate FinFETs
Author :
Mukherjee, Chhandak ; Maiti, C.K.
Author_Institution :
Dept. of Electron., Indian Inst. of Technol., Kharagpur, Kharagpur, India
fYear :
2013
fDate :
15-19 July 2013
Firstpage :
732
Lastpage :
735
Abstract :
With rapid downscaling of conventional MOSFETs, alternative device architectures are essential. Post-planar non-classical FinFET structures are becoming a popular choice for their reduced short channel effects, electrostatic integrity as well as superior RF performance. Noise is a fundamental problem for RF circuit design. In this work, to understand RF performance, high frequency noise parameters in tri-gate FinFETs are studied in detail. Methods and models for extracting different noise parameters, such as the minimum noise figure, equivalent noise resistance and optimum source admittance, are developed from 50-Ω noise figure measurements. A channel thermal noise model of tri-gate FinFETs is shown in comparison with the experimental data.
Keywords :
MOSFET; circuit noise; semiconductor device models; thermal noise; MOSFET; RF circuit design; electrostatic integrity; equivalent noise resistance; high frequency noise parameters; noise figure; optimum source admittance; post-planar nonclassical FinFET structures; resistance 50 ohm; short channel effects; tri-gate FinFET; FinFETs; Integrated circuit modeling; Noise; Noise figure; Optimized production technology; Equivalent noise resistance; FinFETs; High frequency noise parameters; MOSFET channel noise; Noise; Noise figure; Tri-gate MOSFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
ISSN :
1946-1542
Print_ISBN :
978-1-4799-1241-4
Type :
conf
DOI :
10.1109/IPFA.2013.6599265
Filename :
6599265
Link To Document :
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