DocumentCode
633913
Title
Characteristic analysis of total dose irradiation annealing effect in SOI NMOSFET
Author
He Yujuan ; Luo Hongwei ; En YunFei
Author_Institution
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
fYear
2013
fDate
15-19 July 2013
Firstpage
736
Lastpage
740
Abstract
The effect of total-dose irradiation annealing on SIMOX SOI MOSFET with different bias and temperature was studied. It has been demonstrated that the annealing effect was more remarkable with ON bias than the others and more obvious in high temperature than room temperature.
Keywords
MOSFET; annealing; silicon-on-insulator; SIMOX SOI MOSFET; SOI NMOSFET; bias condition; silicon-on-insulator; temperature 293 K to 298 K; total dose irradiation annealing effect; Annealing; MOS devices; MOSFET circuits; Reliability; SOI device; bias condition; irradiation; total dose effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599266
Filename
6599266
Link To Document