A numerical study of a new four-layer-substrate closing device

Creating high power electrical pulses with sub nanosecond rise time is possible by using fast impact ionization process in closing four-layer-substrate devices. Fast impact ionization in semiconductor devices is one of the quickest non-optical pulse generation methods even in the range of less than nanosecond. In this paper electron-hole plasma generation and fast impact ionization mechanism of a four-layer-substrate device would be discussed by using numerical study and also physical model, Effective factors such as impurity concentration and substrate thickness in switching velocity, current peak, generated electron-hole plasma and residual voltage in device. This study provides several optimized characteristics in these switches.