Theoretical estimation of optical confinement factor and its effects on DC characteristics of long wavelength transistor

Author

Farjadian, Mohammad Reza ; Kaatuzian, Hassan ; Taghavi, Iman

Author_Institution

Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2013

fDate

14-16 May 2013

Firstpage

1

Lastpage

4

Abstract

In this paper, we introduce an approximate way to estimate the optical confinement factor (OCF) in Double Heterostructure Long Wavelength Transistor Lasers (DH-LWTL). Calculating the steady state electron density and differential optical gain, we investigate the OCF effects on the device DC performances as a function of the base width. Our results exhibit an optimum base width of 48nm for which the threshold current density is minimized down to 4.6 kA/cm^-2, which are in good agreement with experimental data for diode lasers with similar structures.

Keywords

current density; electron density; semiconductor lasers; transistors; DC characteristics; DH-LWTL; OCF; differential optical gain; diode laser; double heterostructure long wavelength transistor laser; optical confinement factor; optimum base width; size 48 nm; steady state electron density; threshold current density; Mathematical model; Optical refraction; Optical variables control; Optical waveguides; Quantum well lasers; Threshold current; Transistors; Double Heterostructure; Long Wavelength Transistor Laser; Optical Confinement Factor; Quantum well;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2013 21st Iranian Conference on

Conference_Location

Mashhad

Type

conf

DOI

10.1109/IranianCEE.2013.6599838

Filename

6599838