Title :
Design of a W-Band 2-bit differential CMOS phase shifter
Author :
Vahdati, Ali ; Varonen, Mikko ; Karkkainen, Mikko ; Halonen, Kari A. I.
Author_Institution :
Sch. of Electr. Eng., Dept. of Micro- & Nanosci., Aalto Univ., Espoo, Finland
Abstract :
This paper presents the design of a W-Band I-Q phase shifter and the corresponding simulation results in 28-nm CMOS technology. The design of passive components like a 90° hybrid and transformers needed to realize differential I-Q operation is shown. The phase of the RF signal can be varied from 0° to 270° in steps of 90°. The simulated input and output matching are better than -10 dB, and the maximum phase error is roughly 10° with a maximum output imbalance of 0.5 dB at 90 GHz using a 1-V supply voltage. The total power consumption is 41 mW and the die area is 0.46 mm2.
Keywords :
CMOS integrated circuits; circuit simulation; millimetre wave integrated circuits; millimetre wave phase shifters; transformers; CMOS technology; RF phase signal; W-band I-Q phase shifter; W-band differential CMOS phase shifter; differential I-Q operation; frequency 90 GHz; gain 0.5 dB; maximum output imbalance; maximum phase error; passive component; power 41 mW; power consumption; simulated input matching; simulated output matching; size 28 nm; transformer; voltage 1 V; word length 2 bit; CMOS integrated circuits; CMOS technology; Couplers; Impedance matching; Microwave circuits; Phase shifters; Simulation; CMOS Active Switches; Millimeter Waves; Phased Arrays; W-Band Phase Shifters;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on
Conference_Location :
Villach
Print_ISBN :
978-1-4673-4580-4
DOI :
10.1109/PRIME.2013.6603111
