Design of a W-Band 2-bit differential CMOS phase shifter

Author

Vahdati, Ali ; Varonen, Mikko ; Karkkainen, Mikko ; Halonen, Kari A. I.

Author_Institution

Sch. of Electr. Eng., Dept. of Micro- & Nanosci., Aalto Univ., Espoo, Finland

fYear

2013

fDate

24-27 June 2013

Firstpage

97

Lastpage

100

Abstract

This paper presents the design of a W-Band I-Q phase shifter and the corresponding simulation results in 28-nm CMOS technology. The design of passive components like a 90° hybrid and transformers needed to realize differential I-Q operation is shown. The phase of the RF signal can be varied from 0° to 270° in steps of 90°. The simulated input and output matching are better than -10 dB, and the maximum phase error is roughly 10° with a maximum output imbalance of 0.5 dB at 90 GHz using a 1-V supply voltage. The total power consumption is 41 mW and the die area is 0.46 mm².

Keywords

CMOS integrated circuits; circuit simulation; millimetre wave integrated circuits; millimetre wave phase shifters; transformers; CMOS technology; RF phase signal; W-band I-Q phase shifter; W-band differential CMOS phase shifter; differential I-Q operation; frequency 90 GHz; gain 0.5 dB; maximum output imbalance; maximum phase error; passive component; power 41 mW; power consumption; simulated input matching; simulated output matching; size 28 nm; transformer; voltage 1 V; word length 2 bit; CMOS integrated circuits; CMOS technology; Couplers; Impedance matching; Microwave circuits; Phase shifters; Simulation; CMOS Active Switches; Millimeter Waves; Phased Arrays; W-Band Phase Shifters;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on

Conference_Location

Villach

Print_ISBN

978-1-4673-4580-4

Type

conf

DOI

10.1109/PRIME.2013.6603111

Filename

6603111