Title :
tLIFTING: An open-source multi-level fault simulator for ionizing effects
Author :
Feng Lu ; Di Natale, G. ; Flottes, M.-L. ; Rouzeyre, B.
Author_Institution :
LIRMM, Univ. Montpellier II, Montpellier, France
Abstract :
This paper presents a multi-level simulator tLIFTING for fault simulation in digital circuits. Multi-level simulation is used for precision of the information of the fine grain transistor level and the conciseness of the coarse grain logic level. This multi-level process allows handling natural and maliciously induced physical phenomenon leading to circuit misbehavior, while dealing with large circuits.
Keywords :
digital circuits; fault tolerant computing; coarse grain logic level; digital circuits; fine grain transistor level; induced physical phenomenon; ionizing effects; open-source multilevel fault simulator; tLIFTING; Circuit faults; Computational modeling; Integrated circuit modeling; Laser modes; Logic gates; Solid modeling; Transient analysis; Ionizing Effects; Multi-level Fault Simulation;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on
Conference_Location :
Villach
Print_ISBN :
978-1-4673-4580-4
DOI :
10.1109/PRIME.2013.6603133
