Smart power: From problem statement to system solution

Author

Draxelmayr, D. ; Norling, Karl ; Lindholm, Christian

Author_Institution

Infineon Technol. Austria AG, Villach, Austria

fYear

2013

fDate

24-27 June 2013

Firstpage

19

Lastpage

22

Abstract

This paper demonstrates the design of a high power, high efficiency inverter based on SiC (Silicon Carbide) JFET (Junction Field Effect Transistor) switches. It starts with a problem statement, i.e. which requirements are to be fulfilled, discusses design solutions, and ends with some measurements of the complete system. The final design is able to handle more than 1000V, currents of more than 30A and achieves a peak efficiency of more than 99% in a buck configuration [1].

Keywords

field effect transistor switches; invertors; junction gate field effect transistors; silicon compounds; wide band gap semiconductors; JFET switch; SiC; buck configuration; high power high efficiency inverter; junction field effect transistor switch; peak efficiency; smart power; voltage 1000 V; Capacitors; JFETs; Logic gates; MOSFET; Silicon carbide; Switched-mode power supply; Switches; SMPS; SiC; bootstrapping; gate driver; power conversion; silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on

Conference_Location

Villach

Print_ISBN

978-1-4673-4580-4

Type

conf

DOI

10.1109/PRIME.2013.6603142

Filename

6603142