Title :
Smart power: From problem statement to system solution
Author :
Draxelmayr, D. ; Norling, Karl ; Lindholm, Christian
Author_Institution :
Infineon Technol. Austria AG, Villach, Austria
Abstract :
This paper demonstrates the design of a high power, high efficiency inverter based on SiC (Silicon Carbide) JFET (Junction Field Effect Transistor) switches. It starts with a problem statement, i.e. which requirements are to be fulfilled, discusses design solutions, and ends with some measurements of the complete system. The final design is able to handle more than 1000V, currents of more than 30A and achieves a peak efficiency of more than 99% in a buck configuration [1].
Keywords :
field effect transistor switches; invertors; junction gate field effect transistors; silicon compounds; wide band gap semiconductors; JFET switch; SiC; buck configuration; high power high efficiency inverter; junction field effect transistor switch; peak efficiency; smart power; voltage 1000 V; Capacitors; JFETs; Logic gates; MOSFET; Silicon carbide; Switched-mode power supply; Switches; SMPS; SiC; bootstrapping; gate driver; power conversion; silicon carbide;
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on
Conference_Location :
Villach
Print_ISBN :
978-1-4673-4580-4
DOI :
10.1109/PRIME.2013.6603142
