Title :
Non volatile memory for FPGA booting in space
Author :
Arbat, A. ; Calligaro, C. ; Dayan, Vladislav ; Pikhay, Evgeny ; Roizin, Y.
Author_Institution :
RedCat Devices, Milan, Italy
Abstract :
This paper proposes a new non-volatile memory (NVM) architecture that would increase the radiation hardness of standard design. The memory allows storing the configuration bit-stream for on-satellites FPGAs reducing the necessity of information exchange with ground control to recover the system. A 1Mbit non-volatile memory prototype has been fabricated using a standard 180nm CMOS process using a Tower Semiconductors proprietary S-Flash cell.
Keywords :
aerospace computing; artificial satellites; field programmable gate arrays; random-access storage; CMOS process; FPGA booting; NVM architecture; S-Flash cell; Tower Semiconductors; complimentary metal oxide semiconductor; configuration bit-stream; field programmable gate array; information exchange; nonvolatile memory architecture; on-satellite FPGA; radiation hardness; size 180 nm; Computer architecture; Field programmable gate arrays; Microprocessors; Nonvolatile memory; Radiation hardening (electronics); Random access memory; Threshold voltage; FPGA rebboting; Non-volatile memory; Radiation-hardening by design; S-Flash; semiconductor memory;
Conference_Titel :
Adaptive Hardware and Systems (AHS), 2013 NASA/ESA Conference on
Conference_Location :
Torino
DOI :
10.1109/AHS.2013.6604247
