Non volatile memory for FPGA booting in space

Author

Arbat, A. ; Calligaro, C. ; Dayan, Vladislav ; Pikhay, Evgeny ; Roizin, Y.

Author_Institution

RedCat Devices, Milan, Italy

fYear

2013

fDate

24-27 June 2013

Firstpage

204

Lastpage

208

Abstract

This paper proposes a new non-volatile memory (NVM) architecture that would increase the radiation hardness of standard design. The memory allows storing the configuration bit-stream for on-satellites FPGAs reducing the necessity of information exchange with ground control to recover the system. A 1Mbit non-volatile memory prototype has been fabricated using a standard 180nm CMOS process using a Tower Semiconductors proprietary S-Flash cell.

Keywords

aerospace computing; artificial satellites; field programmable gate arrays; random-access storage; CMOS process; FPGA booting; NVM architecture; S-Flash cell; Tower Semiconductors; complimentary metal oxide semiconductor; configuration bit-stream; field programmable gate array; information exchange; nonvolatile memory architecture; on-satellite FPGA; radiation hardness; size 180 nm; Computer architecture; Field programmable gate arrays; Microprocessors; Nonvolatile memory; Radiation hardening (electronics); Random access memory; Threshold voltage; FPGA rebboting; Non-volatile memory; Radiation-hardening by design; S-Flash; semiconductor memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Adaptive Hardware and Systems (AHS), 2013 NASA/ESA Conference on

Conference_Location

Torino

Type

conf

DOI

10.1109/AHS.2013.6604247

Filename

6604247