DocumentCode :
634746
Title :
Graphoepitaxial Josephson junctions and DC SQUIDs
Author :
Faley, M.I. ; Meertens, D. ; Poppe, Ulrich ; Dunin-Borkowski, R.E.
Author_Institution :
Peter Grunberg Inst. (PGI-5: Microstructure Res.), Forschungszentrum Julich GmbH, Julich, Germany
fYear :
2013
fDate :
7-11 July 2013
Firstpage :
1
Lastpage :
3
Abstract :
We have prepared high-Tc superconducting heterostructures for DC SQUIDs with graphoepitaxial step edge Josephson junctions on single crystal MgO substrates and investigated them using complementary characterization techniques, including atomic force microscopy, scanning electron microscopy and high-resolution transmission electron microscopy. Combined epitaxial (out-of-plane) and graphoepitaxial (in-plane) growth of YBa2Cu3O7-x (YBCO) films on the tilted surfaces of step edges on MgO substrates was observed. The high-Tc step-edge Josephson junctions demonstrated a good reproducibility and an IcRn product of about 600 μV at 77 K. The DC SQUIDs with step edge junctions showed voltage swings δVpp of up to about 60 μV at 77 K. High values of Rn of the graphoepitaxial step edge Josephson junctions can be advantageous for their applications as qubits.
Keywords :
Josephson effect; SQUIDs; atomic force microscopy; barium compounds; epitaxial growth; high-temperature superconductors; scanning electron microscopy; superconducting thin films; transmission electron microscopy; yttrium compounds; DC SQUID; MgO; YBCO films; YBa2Cu3O7-x; atomic force microscopy; graphoepitaxial Josephson junctions; graphoepitaxial growth; high-resolution transmission electron microscopy; high-temperature superconducting heterostructures; scanning electron microscopy; single crystal MgO substrates; temperature 77 K; Films; Josephson junctions; Junctions; SQUIDs; Substrates; Surface topography; Yttrium barium copper oxide; Josephson junctions; SQUIDs; graphoepitaxial growth; heterostructures; high-Tc films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Superconductive Electronics Conference (ISEC), 2013 IEEE 14th International
Conference_Location :
Cambridge, MA
Print_ISBN :
978-1-4673-6369-3
Type :
conf
DOI :
10.1109/ISEC.2013.6604264
Filename :
6604264
Link To Document :
بازگشت