• DocumentCode
    6353
  • Title

    Electric Field and Interface Charge Extraction in Field-Plate Assisted RESURF Devices

  • Author

    Boksteen, Boni K. ; Heringa, Anco ; Ferrara, A. ; Steeneken, Peter G. ; Schmitz, Jurriaan ; Hueting, Raymond J. E.

  • Author_Institution
    MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
  • Volume
    62
  • Issue
    2
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    622
  • Lastpage
    629
  • Abstract
    A methodology for extracting the lateral electric field (Ex) in the drain extension of thin silicon-on-insulator high-voltage field-plate assisted reduced surface field (RESURF) devices is detailed including its limits and its accuracy. Analytical calculations and technology computer-aided design device modeling corresponding to experimental data are used. It is shown how to obtain trapped interface charge distributions (e.g., due to hot-carrier injection) from the extracted fields. Thus, a new method for determining the position and quantity of injected charges in the drain extension of RESURF power transistors is introduced.
  • Keywords
    charge injection; electric fields; power transistors; semiconductor device models; silicon-on-insulator; technology CAD (electronics); RESURF power transistor; computer-aided design device modeling; field-plate assisted RESURF device; interface charge extraction; lateral electric field extraction; reduced surface field device; silicon-on-insulator; trapped interface charge distribution; Current measurement; Electric potential; Equations; Hot carrier injection; Human computer interaction; Logic gates; Mathematical model; Double-diffused metal-oxide-semiconductor; Double-diffused metal???oxide???semiconductor; electric field ( $boldsymbol {E}_{boldsymbol {x}}$ ); electric field (Eₓ); extraction; field-plate (FP); high voltage; hot-carrier injection (HCI); interface charge; power transistor; reduced surface field (RESURF); silicon-on-insulator (SOI); silicon-on-insulator (SOI).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2383360
  • Filename
    7004006