DocumentCode :
6356
Title :
Evaluation of a Pulsed Ultraviolet Light-Emitting Diode for Triggering Photoconductive Semiconductor Switches
Author :
Mauch, Daniel ; Hettler, Cameron ; Sullivan, William W. ; Neuber, Andreas A. ; Dickens, James
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA
Volume :
43
Issue :
7
fYear :
2015
fDate :
Jul-15
Firstpage :
2182
Lastpage :
2186
Abstract :
The power output, forward voltage, conversion efficiency, and spectral characteristics of a 365 nm ultraviolet light-emitting diode (LED) were measured for applications of triggering wide-bandgap photoconductive switches for pulsed power applications. Pulsed currents through the LED ranged from 125 mA up to 2.2 A at widths from 10 μs up to several seconds. Using time-resolved electroluminescence spectroscopy, peak emission was observed to occur at 368.5 nm for short pulses with a red-shift to 371.8 nm for pulses 8 s in duration. A peak light output of 4.1 W was measured for short pulses (<;50 μs) of 2.12 A, corresponding to six times the rated output specification. The LED was used to trigger a high-voltage photoconductive semiconductor switch (PCSS) at voltages up to 6 kV into a high-impedance load. The 365 nm LED is a promising candidate for optical triggering of PCSS devices.
Keywords :
electroluminescence; light emitting diodes; photoconducting switches; power semiconductor switches; red shift; wide band gap semiconductors; LED; current 2.12 A; photoconductive semiconductor switches; power 4.1 W; pulsed currents; pulsed power applications; pulsed ultraviolet light-emitting diode; red-shift; spectral characteristics; time 8 s; time-resolved electroluminescence spectroscopy; wavelength 365 nm; wavelength 368.5 nm; wavelength 371.8 nm; wide-bandgap photoconductive switches; Current measurement; Light emitting diodes; Optical devices; Optical pulses; Optical pumping; Optical switches; Silicon carbide; Light-emitting diode (LED); photoconducting devices; photoconductivity; power semiconductor switches; pulsed power; silicon carbide;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2015.2435744
Filename :
7151899
Link To Document :
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