Title :
Charge storage properties of SiNWs grown by hot-wire chemical vapor process technique as electrodes in electrochemical capacitors
Author :
Soam, Ankur ; Dusane, R.O.
Author_Institution :
Dept. of Metall. Eng. & Mater. Sci., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
Silicon nanowires (SiNWs) synthesized by Hot-Wire Chemical Vapor Process (HWCVP) via vapor-liquid-solid mechanism are explored as electrodes for supercapacitor application. The electrochemical properties of SiNWs in two electrode configuration were evaluated by galvanostatic charge/discharge test and cyclic voltammetry at different scan rates. A specific capacitance of 800 μF/cm2 at 10 mV/sec scan rate is obtained and the capacitive behavior is maintained even at higher scan rates. All electrochemical measurements were carried out in 1M Na2SO4 aqueous electrolyte. Scanning Electron Microscopy was also employed for characterization of SiNWs morphology.
Keywords :
capacitance; chemical vapour deposition; electrochemical electrodes; electrolytes; elemental semiconductors; nanofabrication; nanowires; scanning electron microscopy; semiconductor growth; silicon; supercapacitors; voltammetry (chemical analysis); SEM; Si; aqueous electrolyte; capacitive behavior; charge storage properties; cyclic voltammetry; electrochemical capacitors; electrochemical measurements; electrochemical properties; galvanostatic charge-discharge test; hot-wire chemical vapor process technique; scan rates; scanning electron microscopy; silicon nanowire morphology characterization; specific capacitance; supercapacitor application; two electrode configuration; vapor-liquid-solid mechanism; Electrodes; Morphology; Scanning electron microscopy; Substrates; CV; HWCVP; SiNWs; Supercapacitor;
Conference_Titel :
Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4799-1377-0
DOI :
10.1109/ICANMEET.2013.6609333