• DocumentCode
    636126
  • Title

    Charge storage properties of SiNWs grown by hot-wire chemical vapor process technique as electrodes in electrochemical capacitors

  • Author

    Soam, Ankur ; Dusane, R.O.

  • Author_Institution
    Dept. of Metall. Eng. & Mater. Sci., Indian Inst. of Technol. Bombay, Mumbai, India
  • fYear
    2013
  • fDate
    24-26 July 2013
  • Firstpage
    416
  • Lastpage
    418
  • Abstract
    Silicon nanowires (SiNWs) synthesized by Hot-Wire Chemical Vapor Process (HWCVP) via vapor-liquid-solid mechanism are explored as electrodes for supercapacitor application. The electrochemical properties of SiNWs in two electrode configuration were evaluated by galvanostatic charge/discharge test and cyclic voltammetry at different scan rates. A specific capacitance of 800 μF/cm2 at 10 mV/sec scan rate is obtained and the capacitive behavior is maintained even at higher scan rates. All electrochemical measurements were carried out in 1M Na2SO4 aqueous electrolyte. Scanning Electron Microscopy was also employed for characterization of SiNWs morphology.
  • Keywords
    capacitance; chemical vapour deposition; electrochemical electrodes; electrolytes; elemental semiconductors; nanofabrication; nanowires; scanning electron microscopy; semiconductor growth; silicon; supercapacitors; voltammetry (chemical analysis); SEM; Si; aqueous electrolyte; capacitive behavior; charge storage properties; cyclic voltammetry; electrochemical capacitors; electrochemical measurements; electrochemical properties; galvanostatic charge-discharge test; hot-wire chemical vapor process technique; scan rates; scanning electron microscopy; silicon nanowire morphology characterization; specific capacitance; supercapacitor application; two electrode configuration; vapor-liquid-solid mechanism; Electrodes; Morphology; Scanning electron microscopy; Substrates; CV; HWCVP; SiNWs; Supercapacitor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4799-1377-0
  • Type

    conf

  • DOI
    10.1109/ICANMEET.2013.6609333
  • Filename
    6609333