DocumentCode
636127
Title
Effect of Mo doping on the electrical properties of VO2 phase
Author
Bharathi, R. ; Umarji, Arun M.
Author_Institution
Mater. Res. Centre, Indian Inst. of Sci., Bangalore, India
fYear
2013
fDate
24-26 July 2013
Firstpage
424
Lastpage
425
Abstract
Solution combustion synthesis technique was adopted to synthesize V2O5, and Mo doped phases, The assynthesized V2O5, has been reduced by a novel reduction technique to form VO2 typephase. The monophasic nature of the samples as revealed by XRD data and systematic shift in peak position indicated solid solubility up to 2 at % of Mo in VO2 lattice. The crystallite size was found to ~ 40 nm. Particle size measurement carried out using Transmission electron microscope (TEM)agreed with XRD experiments. Scanning electron microscope revealed the morphology of the particles to be plate like and bimodal. Variation in the metal-insulator transition temperature as a function of doping was investigated by 4-probe electrical resistivity measurement on sintered ceramics.
Keywords
X-ray diffraction; ceramics; combustion synthesis; crystallites; electrical resistivity; metal-insulator transition; molybdenum; particle size; scanning electron microscopy; solid solubility; transmission electron microscopy; vanadium compounds; 4-probe electrical resistivity measurement; Mo doped phases; Mo doping effect; SEM; TEM; V2O5:Mo; XRD data; crystallite size; electrical properties; metal-insulator transition temperature; monophasic nature; particle morphology; particle size measurement; peak position; reduction technique; scanning electron microscope; sintered ceramics; solid solubility; solution combustion synthesis technique; transmission electron microscope; vanadia lattice; vanadia type phase; Ceramics; Heating; Microscopy; COMBUSTION SYNTHESIS; TRANSITION TEMPERATURE; VANADIUM OXIDES;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
Conference_Location
Chennai
Print_ISBN
978-1-4799-1377-0
Type
conf
DOI
10.1109/ICANMEET.2013.6609335
Filename
6609335
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