• DocumentCode
    636127
  • Title

    Effect of Mo doping on the electrical properties of VO2 phase

  • Author

    Bharathi, R. ; Umarji, Arun M.

  • Author_Institution
    Mater. Res. Centre, Indian Inst. of Sci., Bangalore, India
  • fYear
    2013
  • fDate
    24-26 July 2013
  • Firstpage
    424
  • Lastpage
    425
  • Abstract
    Solution combustion synthesis technique was adopted to synthesize V2O5, and Mo doped phases, The assynthesized V2O5, has been reduced by a novel reduction technique to form VO2 typephase. The monophasic nature of the samples as revealed by XRD data and systematic shift in peak position indicated solid solubility up to 2 at % of Mo in VO2 lattice. The crystallite size was found to ~ 40 nm. Particle size measurement carried out using Transmission electron microscope (TEM)agreed with XRD experiments. Scanning electron microscope revealed the morphology of the particles to be plate like and bimodal. Variation in the metal-insulator transition temperature as a function of doping was investigated by 4-probe electrical resistivity measurement on sintered ceramics.
  • Keywords
    X-ray diffraction; ceramics; combustion synthesis; crystallites; electrical resistivity; metal-insulator transition; molybdenum; particle size; scanning electron microscopy; solid solubility; transmission electron microscopy; vanadium compounds; 4-probe electrical resistivity measurement; Mo doped phases; Mo doping effect; SEM; TEM; V2O5:Mo; XRD data; crystallite size; electrical properties; metal-insulator transition temperature; monophasic nature; particle morphology; particle size measurement; peak position; reduction technique; scanning electron microscope; sintered ceramics; solid solubility; solution combustion synthesis technique; transmission electron microscope; vanadia lattice; vanadia type phase; Ceramics; Heating; Microscopy; COMBUSTION SYNTHESIS; TRANSITION TEMPERATURE; VANADIUM OXIDES;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4799-1377-0
  • Type

    conf

  • DOI
    10.1109/ICANMEET.2013.6609335
  • Filename
    6609335