Effect of substrate temperature on SnS thin film deposition by nebulization technique

Potential applications of thin films are well known, it strongly depends on the quality of the film. Several novel techniques are adopted for the fabrication. We have followed a completely newer technique using nebulizer for the film deposition. Substrate temperature (Ts) is one of the vital parameter that decides the nature of the film. Films were deposited for the range of Ts from 150 °C to 250 °C. The films were deposited with the precursor solution and Thiourea SC(NH₂)₂. The XRD data confirms that the films prepared are in polycrystalline nature containing the compounds of SnS₂, Sn₂S₃ and SnS. The film prepared at 225 °C contains only SnS and the film at 250 °C contains SnS and SnO compounds. The indirect allowed band gap values for SnS thin film obtained from optical absorption measurements is 1.8 eV. Scanning Electron Microscope photographs conform that the films prepared by Nebulized spray technique are uniformly deposited without pinholes. The thickness and other physical parameters and possible technical applications of the film will be discussed in details.