Role of surface bonding in thermo physical properties of Indium nitride nano-semiconductor

Author

Diwan, Bhoopendra Dhar ; Murugan, S.

Author_Institution

Dept. of Basic Sci., Dr. C.V. Raman Univ., Bilaspur, India

fYear

2013

fDate

24-26 July 2013

Firstpage

509

Lastpage

512

Abstract

In this paper we have analyzed the effect of size and number of atom-pairs in normalized per atom pair binding (cohesive) energy and melting temperature of the Indium nitride ( InN ) nano-particle using simple model approach. It is observed that the per-atom-pair binding (cohesive) energy and melting temperature are a quadratic function of the inverse of the particle size for InN nano-particle. The per atom-pair binding (cohesive) energy and melting temperature comes near that of their bulk value with increasing the particle size and same as the bulk material when the particle size is above than 100 nm.

Keywords

III-V semiconductors; binding energy; indium compounds; melting point; nanoparticles; particle size; wide band gap semiconductors; InN; cohesive energy; indium nitride nanosemiconductor; melting temperature; normalized per atom pair binding energy; particle size; quadratic function; surface bonding; thermo physical properties; Solids; Binding energy; Melting temperature; Nano-cluster; Nano-particle; Semiconductors; Size effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on

Conference_Location

Chennai

Print_ISBN

978-1-4799-1377-0

Type

conf

DOI

10.1109/ICANMEET.2013.6609350

Filename

6609350