Title :
Role of surface bonding in thermo physical properties of Indium nitride nano-semiconductor
Author :
Diwan, Bhoopendra Dhar ; Murugan, S.
Author_Institution :
Dept. of Basic Sci., Dr. C.V. Raman Univ., Bilaspur, India
Abstract :
In this paper we have analyzed the effect of size and number of atom-pairs in normalized per atom pair binding (cohesive) energy and melting temperature of the Indium nitride ( InN ) nano-particle using simple model approach. It is observed that the per-atom-pair binding (cohesive) energy and melting temperature are a quadratic function of the inverse of the particle size for InN nano-particle. The per atom-pair binding (cohesive) energy and melting temperature comes near that of their bulk value with increasing the particle size and same as the bulk material when the particle size is above than 100 nm.
Keywords :
III-V semiconductors; binding energy; indium compounds; melting point; nanoparticles; particle size; wide band gap semiconductors; InN; cohesive energy; indium nitride nanosemiconductor; melting temperature; normalized per atom pair binding energy; particle size; quadratic function; surface bonding; thermo physical properties; Solids; Binding energy; Melting temperature; Nano-cluster; Nano-particle; Semiconductors; Size effect;
Conference_Titel :
Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4799-1377-0
DOI :
10.1109/ICANMEET.2013.6609350
