• DocumentCode
    636150
  • Title

    Design and analysis of two stage operational amplifier based on emerging sub-32nm technology

  • Author

    Sankar, P. A. Gowri ; Kumar, K. Udhaya

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Anna Univ., Chennai, India
  • fYear
    2013
  • fDate
    24-26 July 2013
  • Firstpage
    587
  • Lastpage
    591
  • Abstract
    Carbon Nanotube Field-Effect Transistor (CNFET) is a promising candidate for future electronic devices for low-power low-voltage digital or analog circuit application. In this paper, we presented a low-power low-voltage two stage operational amplifiers (OPAMPs) based on emerging CNFET technology. The proposed CNFET based operational amplifier (OPAMP) performance characteristic are studied and compared with existing CMOS sub-32nm technology. The operational amplifier performance characteristics are obtained by using HSPICE software for circuit simulation at 0.9V input supply voltage. Simulation results show that the proposed CNFET OPAMP circuit achieve high dc gain more than 45dB, high Gain Bandwidth up to 198MHz, phase margin is 48 degrees, the output swing is ±0.9V, settling time is 0.754ns, CMRR is 52.45dB, power supply rejection ratio is 54.35dB and low static power dissipation of 13μW. The results obtained suggest that the carbon nanotube (CNT) OPAMP has a promising potential for low-power, highs-peed applications in both analog and mixed-signal nanoelectronic circuits.
  • Keywords
    SPICE; carbon nanotube field effect transistors; low-power electronics; mixed analogue-digital integrated circuits; operational amplifiers; CNFET OPAMP circuit; HSPICE software; analog circuits; carbon nanotube field-effect transistor; frequency 198 MHz; high-speed applications; low-power low-voltage two stage operational amplifiers; mixed-signal nanoelectronic circuits; operational amplifier performance; output swing; phase margin; static power dissipation; sub-32nm technology; time 0.754 ns; voltage 0.9 V; CMOS integrated circuits; CMOS technology; CNTFETs; Nanoscale devices; Robustness; Semiconductor device modeling; Amplifier; Carbon nanotube field effect transistor (CNFET); Op Amp; design;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4799-1377-0
  • Type

    conf

  • DOI
    10.1109/ICANMEET.2013.6609382
  • Filename
    6609382