DocumentCode :
637610
Title :
Design and simulation of ESD-resistant ICs
Author :
Axelrad, Valery
Author_Institution :
Sequoia Design Syst., Inc., Woodside, CA, USA
fYear :
2013
fDate :
20-22 June 2013
Firstpage :
29
Lastpage :
40
Abstract :
Robustness of modern ICs during system assembly and normal operation requires that protection circuits are built-in to prevent damage to internal circuit elements due to Electrostatic Discharge events (ESD), which can inject substantial energy into the chip. ESD protection as well as protection against other damaging events, such as latchup, is highly dependent on chip architecture and circuit design, electrical properties of interconnects and parasitic devices, and of course device design and semiconductor process technology.
Keywords :
electrostatic discharge; integrated circuit design; system-on-chip; ESD-resistant IC; chip architecture; circuit design; damaging events; electrical properties; electrostatic discharge events; interconnects; latchup; normal operation; parasitic devices; protection circuits; robustness; semiconductor process technology; system assembly; Analytical models; Electrostatic discharges; Equations; Finite element analysis; Integrated circuit modeling; Mathematical model; Semiconductor process modeling; Analog Design; ESD; Latchup; Physical Design; Power Devices; Simulation; TCAD;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference
Conference_Location :
Gdynia
Print_ISBN :
978-83-63578-00-8
Type :
conf
Filename :
6613308
Link To Document :
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