Title :
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs
Author :
Graef, Michael ; Holtij, Thomas ; Hain, Fabian ; Kloes, Alexander ; Iñiguez, Benjamin
Author_Institution :
Competence Center for Nanotechnol. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany
Abstract :
In the last few years the Tunnel-FET has become one of the promising devices to be the successor of the MOSFET due to its CMOS compatibility and steep subthreshold slopes (S) below 60 mV/dec. In this paper a 2D physics-based analytical model for Tunnel-FETs is introduced. It predicts a 2D band-to-band tunneling probability calculation through Wentzel-Kramers-Brillouin approximation (WKB) based on a 2D solution of electrostatics with respect to the device structure and carrier distributions in the device. These results are embedded in a model for the device current. The solutions of the potential, electrical field and the current transfer characteristics of the model are in good agreement with simulation data from the finite-element-method (FEM) simulator TCAD Sentaurus.
Keywords :
WKB calculations; electrostatics; field effect transistors; finite element analysis; semiconductor device models; tunnel transistors; tunnelling; 2D band-to-band tunneling probability calculation; 2D physics-based analytical model; CMOS compatibility; FEM simulator; TCAD Sentaurus; WKB; Wentzel-Kramers-Brillouin approximation; carrier distributions; device structure; electrostatics; finite-element-method simulator; steep subthreshold slopes; tunnel FET; Boundary conditions; Data models; Electrostatics; Junctions; Logic gates; Probability; Tunneling; 2D Poisson; Double-Gate (DG) Tunnel-FET; analytical modeling; band-to-band tunneling; conformal mapping;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference
Conference_Location :
Gdynia
Print_ISBN :
978-83-63578-00-8
