Title :
A simple method for extraction of threshold voltage of FD SOI MOSFETs
Author :
Gluszko, Grzegorz ; Tomaszewski, Daniel ; Malesinska, Jolanta ; Kucharski, K.
Author_Institution :
Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland
Abstract :
Methods of a MOSFET threshold voltage extraction have been briefly described. A possibility of their application for characterization of a fully-depleted SOI MOSFETs has been discussed. A simple method for SOI MOSFET threshold voltage characterization has been proposed. The concept has been verified based on experimental data obtained for SOI MOSFETs manufactured in ITE.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; FD SOI MOSFET threshold voltage characterization; ITE; MOSFET threshold voltage extraction; experimental data; fully-depleted SOI MOSFET; CMOS integrated circuits; Data mining; Logic gates; MOSFET; Silicon; Substrates; Threshold voltage; CMOS; Fully-depleted SOI; Parameter extraction; Threshold voltage;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference
Conference_Location :
Gdynia
Print_ISBN :
978-83-63578-00-8
