Reliability study on technology trends beyond 20nm

Author

Amat, Esteve ; Calomarde, Antonio ; Rubio, Albert

Author_Institution

Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain

fYear

2013

fDate

20-22 June 2013

Firstpage

414

Lastpage

418

Abstract

In this work, an assessment of different technology trends (planar CMOS, FinFET and III-V MOSFETs) has been carried out in front of some different reliability scenarios (variability and soft errors). The logic circuits based on FinFET devices have presented the best overall behavior, since we have obtained the best performance and variability robustness. Meanwhile, the III-V/Ge-based circuits have shown the best electrical masking in front of soft errors disturbances.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; elemental semiconductors; germanium; integrated circuit reliability; logic circuits; radiation hardening (electronics); semiconductor device reliability; FinFET; Ge; III-V MOSFET; III-V/Ge-based circuits; electrical masking; logic circuits; planar CMOS; reliability; soft errors; technology trends; variability; CMOS integrated circuits; FinFETs; Integrated circuit modeling; Logic circuits; Market research; Performance evaluation; FinFET; III–V devices; SER; Variability;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2013 Proceedings of the 20th International Conference

Conference_Location

Gdynia

Print_ISBN

978-83-63578-00-8

Type

conf

Filename

6613386