DocumentCode
638359
Title
Compact modeling of multi-gate MOSFETs for RF designs
Author
Qiang Chen
Author_Institution
Agilent Technol., Inc., Santa Clara, CA, USA
fYear
2013
fDate
14-18 April 2013
Firstpage
1
Lastpage
4
Abstract
Multi-gate MOSFETs (MuGFETs) such as FinFET, tri-gate, and ETSOI MOSFETs are becoming the new mainstream manufacturing technologies and providing a new platform for RF integration in advanced SOCs. This paper reviews SPICE modeling infrastructure readiness for MuGFETs by examining major compact models for symmetric and asymmetric MuGFETs with an emphasis on RF applications. Comparative analysis and recommendations for improvement are provided.
Keywords
MOSFET; SPICE; radiofrequency integrated circuits; semiconductor device models; MuGFETs; RF designs; SPICE modeling; compact modeling; multigate MOSFETs; Capacitance; Computational modeling; FinFETs; Logic gates; Numerical models; Radio frequency; ETSOI; FinFET; MuGFET; Multi-gate FET; RF; compact modeling; gate resistance; parasitic capacitance; scaling; tri-gate FET;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Symposium (IWS), 2013 IEEE International
Conference_Location
Beijing
Type
conf
DOI
10.1109/IEEE-IWS.2013.6616743
Filename
6616743
Link To Document