Title :
Compact modeling of multi-gate MOSFETs for RF designs
Author_Institution :
Agilent Technol., Inc., Santa Clara, CA, USA
Abstract :
Multi-gate MOSFETs (MuGFETs) such as FinFET, tri-gate, and ETSOI MOSFETs are becoming the new mainstream manufacturing technologies and providing a new platform for RF integration in advanced SOCs. This paper reviews SPICE modeling infrastructure readiness for MuGFETs by examining major compact models for symmetric and asymmetric MuGFETs with an emphasis on RF applications. Comparative analysis and recommendations for improvement are provided.
Keywords :
MOSFET; SPICE; radiofrequency integrated circuits; semiconductor device models; MuGFETs; RF designs; SPICE modeling; compact modeling; multigate MOSFETs; Capacitance; Computational modeling; FinFETs; Logic gates; Numerical models; Radio frequency; ETSOI; FinFET; MuGFET; Multi-gate FET; RF; compact modeling; gate resistance; parasitic capacitance; scaling; tri-gate FET;
Conference_Titel :
Wireless Symposium (IWS), 2013 IEEE International
Conference_Location :
Beijing
DOI :
10.1109/IEEE-IWS.2013.6616743
