Title :
Unique property of a-InGaZnO/Ag interface on thin-film transistor
Author :
Ueoka, Yoshihiro ; Ishikawa, Yozo ; Bermundo, Juan Paolo ; Yamazaki, Hiroshi ; Urakawa, S. ; Osada, Y. ; Horita, Masahiro ; Uraoka, Y.
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
Abstract :
Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) having Ag, Ti, and Mo as source and drain electrodes were characterized. TFTs with Ag electrodes indicated a low and noisy on-state current at a large channel length in a low drain-source voltage. This indicates that the spatial potential barrier exists at the a-IGZO/Ag interface and the resistance of the potential barrier changes like a resistance random access memory. We investigated the unique poverties of a-IGZO/Ag interface systematically.
Keywords :
II-VI semiconductors; amorphous semiconductors; electric resistance; gallium compounds; indium compounds; molybdenum; silver; thin film transistors; titanium; wide band gap semiconductors; zinc compounds; InGaZnO-Ag; InGaZnO-Mo; InGaZnO-Ti; a-IGZO TFT; amorphous indium gallium zinc oxide thin-film transistors; channel length; drain electrode; drain-source voltage; interface property; noisy on-state current; potential barrier resistance; resistance random access memory; source electrode; spatial potential barrier; Electric potential; Electrodes; Logic gates; Materials; Metals; Resistance; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
