DocumentCode :
638710
Title :
The influence of fluorinated SiNx gate insulator in a-InGaZnO thin film transistors
Author :
Yamazaki, Hiroshi ; Ishikawa, Yozo ; Ueoka, Yoshihiro ; Fujiwara, Masamichi ; Takahashi, Eisuke ; Andoh, Yasunori ; Uraoka, Y.
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
fYear :
2013
fDate :
2-5 July 2013
Firstpage :
43
Lastpage :
46
Abstract :
We fabricated highly reliable amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) with fluorinated silicon nitride (SiNx) as a gate insulator. The SiNx layer was formed with utilizing SiF4/N2 as source gases at a temperature as low as 150°C. We studied the influence of hydrogen and fluorine on the electrical characteristics.
Keywords :
amorphous semiconductors; fluorine; gallium compounds; hydrogen; indium compounds; silicon compounds; thin film transistors; zinc compounds; InGaZnO-SiNx:F,H; a-IGZO TFT; amorphous In-Ga-Zn-O thin-film transistors; electrical characteristics; fluorinated SiNx gate insulator; fluorine; hydrogen; source gases; Films; Hydrogen; Insulators; Logic gates; Reliability; Stress; Thin film transistors; a-IGZO; fluorine; gate insulator; reliability; thin-film transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
Type :
conf
Filename :
6617773
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=638710
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