Title :
Graphene FETs: Issues and prospects
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
Current status and future outlook of graphene-based FETs (GFETs) have been reviewed. While its digital applications may find various challenges due mainly from the lack of the band gap, analog (RF) applications should be promising for GFETs. To fully enjoy the excellent transport properties of intrinsic graphene, we need to fully develop extrinsic technologies such as choice of the substrate, gate insulator, metal electrodes.
Keywords :
energy gap; field effect transistors; fullerene devices; graphene; C; analog applications; band gap; gate insulator; graphene FET; metal electrodes; transport properties; Field effect transistors; Graphene; Logic gates; Metals; Quantum capacitance; Silicon; Substrates;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on
Conference_Location :
Kyoto
